Gan and Related Alloys--2000 Symposium Held November 26-December 1, 2000, Boston, Massachusetts, U.S.A

This year's nitride proceedings provides an integrated view of advances in both the basic sciences and the technology of group-III nitride electronic and optoelectronic devices. The devices discussed include high-frequency, high-power, and high-temperature devices as well as light-emitting diodes, laser diodes, and UV photodetectors. Topical challenges and future goals for the advancement of this rapidly progressing field include the further optimization and stabilization of growth processes, and growth of GaInN, AIGaN, AIInN, and quaternary layers. Also covered are advanced dislocation control, models of the growth kinetics, implications of piezoelectric polarization, the roles of defects, dopants, and contaminants, optimization of light-emission and electron-transport mechanisms, layer lift-off techniques, ohmic and Schottky contacts, as well as general GaN-based device processing. The volume captures the most exciting developments of this rapidly progressing and commercializing field, and should prove useful for both established researchers working on nitrides and for the students of this novel science and technology.Mishra, U. C. is the author of 'Gan and Related Alloys--2000 Symposium Held November 26-December 1, 2000, Boston, Massachusetts, U.S.A' with ISBN 9781558995499 and ISBN 1558995498.