Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence

Research in mid-infrared laser technology has uncovered numerous applications for commercial and government use. A limiting factor for mid- infrared semiconductors is nonradiative recombination, which is a process that produces excess heat without emitting a photon. Nonradiative recombination mechanisms occur over a short time period and difficult to measure. Growth methods have significantly reduced the nonradiative recombination in some materials. The objective of this research is to further the understanding of how quantum well structures impact carrier recombination. InAsSb/InAlASb and InAs/ GaInSb quantum well structures were studied with time-resolved photoluminescence utilizing upconversion, a non-linear wave mixing technique. This research reports Shockley-Read-Hall, radiative, and Auger recombination coefficients at 77k. The luminescence rise times of type I and type II structures are also compared. The number of states available within the quantum well was found to dictate how quickly carriers were able to recombine radiatively. Finally, spectral data was taken to examine the spectral decay of the luminescence. Carrier temperatures were extracted from the spectral data. Type I structures were found to have hotter carrier temperatures and higher Auger coefficients than type II structures.Air Force Inst of Tech Wright-Patterson AFB OH is the author of 'Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence', published 2002 under ISBN 9781423509721 and ISBN 1423509722.